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DMN5L06VK
規(guī)格信息：

制造商:Diodes Incorporated

產品種類:MOSFET

Id-連續(xù)漏極電流:280 mA

Vds-漏源極擊穿電壓:50 V

Rds On-漏源導通電阻:2 Ohms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :20 V

最大工作溫度:+ 150 C

Pd-功率耗散:250 mW

安裝風格:SMD/SMT

封裝 / 箱體:SOT-563-6

商標:Diodes Incorporated

通道模式:Enhancement

配置:Dual

最小工作溫度:- 55 C

系列:DMN5L06

DMN5L06VK

型號	功能描述	生產廠商	PDF大小	PDF頁數(shù)	相關型號	產品購買
DMN5L06VK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	158.31 Kbytes	共5頁	FDS9936A,AO8808A,AO4900A,NDS9936,CEM9936,NDS8963,AO8810,AO4812,AO4902,NDS9945	產品購買
DMN5L06VK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	278.29 Kbytes	共6頁		產品購買
DMN5L06VK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	490.01 Kbytes	共7頁		產品購買
DMN5L06VK-13A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	490.01 Kbytes	共7頁		產品購買
DMN5L06VK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	278.29 Kbytes	共6頁		產品購買
DMN5L06VK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	158.31 Kbytes	共5頁	FDS9936A,AO8808A,AO4900A,NDS9936,CEM9936,NDS8963,AO8810,AO4812,AO4902,NDS9945	產品購買
DMN5L06VK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	174.57 Kbytes	共6頁		產品購買
DMN5L06VK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	490.01 Kbytes	共7頁		產品購買
DMN5L06VK-7A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	490.01 Kbytes	共7頁		產品購買
DMN5L06VKQ-7	MOSFET 2N7002 Family	Diodes Incorporated	267.71 Kbytes	共6頁		產品購買