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C3M0015065DSilicon Carbide Power MOSFETC3MTM MOSFET TechnologyN-Channel Enhancement Mode
Features? 3rd Generation SiC MOSFET technology? High blocking voltage with low on-resistance? High speed switching with low capacitances? Fast intrinsic diode with low reverse recovery (Qrr)? Halogen free, RoHS compliantBenefits? Higher system efficiency? Reduced cooling requirements? Increased power density? Increased system switching frequency? Easy to parallel and simple to drive? Enable new hard switching PFC topologies (Totem-Pole)Applications? EV charging? Solar PV Inverters? UPS? SMPS? DC/DC convertersPackagePart Number Package MarkingC3M0015065D TO-247-3 C3M0015065DMaximum Ratings (TC=25?C, unless otherwise specified)Symbol Parameter Value Unit NoteVDSmax Drain - Source Voltage 650 VVGSmax Gate - Source voltage -8/+19 V Note 1IDContinuous Drain Current, VGS = 15 V, TC = 25?C 120A Fig. 19Note 2 Continuous Drain Current, VGS = 15 V, TC = 100?C 96ID(pulse) Pulsed Drain Current, Pulse width tP limited by Tjmax 418 APD Power Dissipation, TC=25?C, TJ = 175 ?C 416 W Fig. 20TJ , Tstg Operating Junction and Storage Temperature -40 to+175 ?CTL Solder Temperature, 1.6mm (0.063”) from case for 10s 260 ?CMd Mounting Torque, (M3 or 6-32 screw) 18.8Nmlbf-in