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EasyPACK?ModulmitCoolSiC?TrenchMOSFETundPressFIT/NTC
EasyPACK?modulewithCoolSiC?TrenchMOSFETandPressFIT/NTC
Vorl?ufigeDaten/PreliminaryData-VD = 1200VID nom = 50A / IDRM = 100APotentielleAnwendungen PotentialApplications? AnwendungenmithohenSchaltfrequenzen ? HighFrequencySwitchingapplication? DC/DCWandler ? DC/DCconverter? Schwei?en ? WeldingElektrischeEigenschaften ElectricalFeatures? HoheStromdichte ? Highcurrentdensity? NiederinduktivesDesign ? Lowinductivedesign? NiedrigeSchaltverluste ? LowswitchinglossesMechanischeEigenschaften MechanicalFeatures? IntegrierterNTCTemperaturSensor ? IntegratedNTCtemperaturesensor? PressFITVerbindungstechnik ? PressFITcontacttechnology? Robuste Montage durch integrierte ?BefestigungsklammernRugged mounting due to integrated mounting clamps
MOSFET/MOSFETH?chstzul?ssigeWerte/MaximumRatedValuesDrain-Source-SpannungDrain-sourcevoltage Tvj = 25°C VDSS 1200 VDrain-GleichstromDCdraincurrent Tvj = 175°C, VGS = 15 V TH = 60°C ID nom 50 AGepulsterDrainstromPulseddraincurrentverifiziertdurchDesign,tplimitiertdurchTvjmaxverifiedbydesign,tplimitedbyTvjmaxID pulse 100 AGate-SourceSpannungGate-sourcevoltage VGSS -10 / 20 VCharakteristischeWerte/CharacteristicValues min. typ. max.EinschaltwiderstandDrain-sourceonresistanceID = 50 AVGS = 15 V RDS on22,529,533,0m?Tvj = 25°CTvj = 125°CTvj = 150°CGate-SchwellenspannungGatethresholdvoltageID=20,0mA,VDS=VGS,Tvj=25°C(testedafter1mspulseatVGS=+20V) VGS(th) 3,45 4,50 5,55 VGesamtGateladungTotalgatecharge VGS = -5 V / 15 V, VDS = 800 V QG 0,124 μCInternerGatewiderstandInternalgateresistor Tvj = 25°C RGint 2,0 ?Eingangskapazit?tInputcapacitancef = 1 MHz, Tvj = 25°CVDS = 800 V, VGS = 0 V, VAC = 25 mV Ciss 3,68 nFAusgangskapazit?tOutputcapacitancef = 1 MHz, Tvj = 25°CVDS = 800 V, VGS = 0 V, VAC = 25 mV Coss 0,22 nFRückwirkungskapazit?tReversetransfercapacitancef = 1 MHz, Tvj = 25°CVDS = 800 V, VGS = 0 V, VAC = 25 mV Crss 0,028 nFCOSSSpeicherenergieCOSSstoredenergyTvj = 25°CVDS = 800 V, VGS = -5 V / 15 V Eoss 88,0 μJDrain-Source-ReststromZerogatevoltagedraincurrent VDS = 1200 V, VGS = -5 V Tvj = 25°C IDSS 0,20 210 μAGate-Source-ReststromGate-sourceleakagecurrentVDS = 0 VTvj = 25°C IGSS400 nA VGS = 20 VVGS = -10 VEinschaltverz?gerungszeit,induktiveLastTurnondelaytime,inductiveloadID = 50 A, VDS = 600 VVGS = -5 V / 15 VRGon = 1,00 ?td on14,314,314,3nsTvj = 25°CTvj = 125°CTvj = 150°CAnstiegszeit,induktiveLastRisetime,inductiveloadID = 50 A, VDS = 600 VVGS = -5 V / 15 VRGon = 1,00 ?tr8,408,408,40nsTvj = 25°CTvj = 125°CTvj = 150°CAbschaltverz?gerungszeit,induktiveLastTurnoffdelaytime,inductiveloadID = 50 A, VDS = 600 VVGS = -5 V / 15 VRGoff = 1,00 ?td off49,449,449,4nsTvj = 25°CTvj = 125°CTvj = 150°CFallzeit,induktiveLastFalltime,inductiveloadID = 50 A, VDS = 600 VVGS = -5 V / 15 VRGoff = 1,00 ?tf11,511,511,5nsTvj = 25°CTvj = 125°CTvj = 150°CEinschaltverlustenergieproPulsTurn-onenergylossperpulseID = 50 A, VDS = 600 V, Lσ = 35 nHdi/dt = 8,30 kA/μs (Tvj = 150°C)VGS = -5 V / 15 V, RGon = 1,00 ?Eon0,430,430,43mJTvj = 25°CTvj = 125°CTvj = 150°CAbschaltverlustenergieproPulsTurn-offenergylossperpulseID = 50 A, VDS = 600 V, Lσ = 35 nHdu/dt = 46,2 kV/μs (Tvj = 150°C)VGS = -5 V / 15 V, RGoff = 1,00 ?Eoff0,110,110,11mJTvj = 25°CTvj = 125°CTvj = 150°CW?rmewiderstand,ChipbisKühlk?rperThermalresistance,junctiontoheatsink proMOSFET/perMOSFET RthJH 0,900 K/WTemperaturimSchaltbetriebTemperatureunderswitchingconditions Tvj op -40 150 °CBodyDiode/BodydiodeH?chstzul?ssigeWerte/MaximumRatedValuesBodyDiode-GleichstromDCbodydiodeforwardcurrent Tvj = 175°C, VGS = -5 V TH = 60°C ISD 16 ACharakteristischeWerte/CharacteristicValues min. typ. max.DurchlassspannungForwardvoltageISD = 50 A, VGS = -5 VISD = 50 A, VGS = -5 VISD = 50 A, VGS = -5 VVSD4,604,354,