商品詳情
LBZX84C2V4LT1G Series
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS ? BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Device*
Device
Marking
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3) ZZT1
()
@ IZT1 =
5 mA
VZ2 (V)
@ IZT2 = 1 mA
(Note 3) ZZT2
()
@ IZT2 =
1 mA
VZ3 (V)
@ IZT3 = 20 mA
(Note 3) ZZT3
()
@ IZT3 =
20 mA
Max Reverse
Leakage
Current
VZ
(mV/k)
@ IZT1 = 5 mA
C (pF)
@ VR = 0
Min Nom Max Min Max Min Max f = 1 MHz
VR
Volts
IR
A @ Min Max
LBZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 ?3.5 0 450
LBZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 ?3.5 0 450
LBZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 ?3.5 0 450
LBZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 ?3.5 0 450
LBZX84C3V6LT1G Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 ?3.5 0 450
LBZX84C3V9LT1G Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 ?3.5 ?2.5 450
LBZX84C4V3LT1G W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 ?3.5 0 450
LBZX84C4V7LT1G Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 ?3.5 0.2 260
LBZX84C5V1LT1G Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 ?2.7 1.2 225
LBZX84C5V6LT1G Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 ?2.0 2.5 200
LBZX84C6V2LT1G Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185
LBZX84C6V8LT1G Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155
LBZX84C7V5LT1G Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140
LBZX84C8V2LT1G Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135
LBZX84C9V1LT1G Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130
LBZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130
LBZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130
LBZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
LBZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120
LBZX84C15LT1G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110
LBZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105
LBZX84C18LT1G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100
LBZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85
LBZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85
LBZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80
Device
Device
Marking
VZ1 Below
@ IZT1 = 2 mA ZZT1
Below
@ IZT1 =
2 mA
VZ2 Below
@ IZT2 = 0.1 mA
ZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@ IZT3 = 10 mA ZZT3
Below
@ IZT3 =
10 mA
Max Reverse
Leakage
Current
VZ
(mV/k) Below
@ IZT1 = 2 mA
C (pF)
@ VR = 0
Min Nom Max Min Max Min Max f = 1 MHz
VR
(V)
IR
A @ Min Max
LBZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
LBZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70
LBZX84C33LT1G Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70
LBZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70
LBZX84C39LT1G Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45
LBZX84C43LT1G Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
LBZX84C47LT1G Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40
LBZX84C51LT1G Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
LBZX84C56LT1G Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
LBZX84C62LT1G Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35
LBZX84C68LT1G Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
LBZX84C75LT1G Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35
Note 3.Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
Rev.A 2/5
S-LBZX84C2V4LT1G Series