制造商: onsemi
產(chǎn)品種類: MOSFET
技術: Si
安裝風格: SMD/SMT
封裝 / 箱體: WDFN-8
晶體管極性: P-Channel
通道數(shù)量: 1 Channel
Vds-漏源極擊穿電壓: 12 V
Id-連續(xù)漏極電流: 5.47 A
Rds On-漏源導通電阻: 32 mOhms
Vgs - 柵極-源極電壓: - 8 V, + 8 V
Qg-柵極電荷: 13 nC
最小工作溫度: - 55 C
最大工作溫度: + 150 C
Pd-功率耗散: 1.46 W
通道模式: Enhancement
商標: onsemi
配置: Single
下降時間: 17.5 ns
正向跨導 - 最小值: 5.9 S
高度: 0.75 mm
長度: 3 mm
產(chǎn)品: MOSFET Small Signal
產(chǎn)品類型: MOSFET
上升時間: 17.5 ns
子類別: MOSFETs
晶體管類型: 1 P-Channel
典型關閉延遲時間: 80 ns
典型接通延遲時間: 8 ns
寬度: 3 mm
This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and optimizing charging performance in battery?powered portable electronics. Features ? High Performance Power MOSFET ? Single Low Vce(sat) Transistor as Charging Power Mux ? 3.0x3.0x0.8 mm WDFN Package ? Independent Pin?out Provides Circuit Flexibility ? Low Profile (<0.8 mm) for Easy Fit in Thin Environments ? This is a Pb?Free Device Applications ? Main Switch and Battery Charging Mux for Portable Electronics ? Optimized for Commercial PMUs from Top Suppliers (See Figure 2)